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STE40NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STE40NA60 V DSS 600 V R DS(on) < 0.135 Ω ID 40 A s s s s s s s s s TYPICAL RDS(on) = 0.12 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY .
lation Withhstand Voltage (AC-RMS)
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Value 600 600 ± 30 40 26 160 460 3.6 -55 to 150 150 2500
Unit V V V A A A W W/ o C
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C C
V
(
•) Pulse width limited by safe operating area
January 1998
1/5
www.DataSheet4U.com
STE40NA60
THERMAL DATA
R thj-case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05
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C/W C/W
AVALANCHE CHARACTERISTICS
Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I .
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