STE40NC60 - ST Microelectronics

STE40NC60 N-CHANNEL Power MOSFET

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ISOTOP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITH M.

Features

continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 600 600 ± 30 40 23 160 460 3.68 3 2500
  –65 to 150 150 (1) ISD≤ 40A, di/dt≤ 100 A/µs, VDD≤ 24V, Tj ≤TjMAX Unit V V V A A A W W/ °C V/ns V °C °C 1/8 (
•)Pulse width limited by safe operating area www.DataSheet4U.com STE40NC60 THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case Max 0.272 0.05 °C/W °C/W Thermal Resistance Case-heatsink with Conductive Greas.