The SuperFREDMesh™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolut.
TYPE STE45NK80ZD s s s s s s Figure 1: Package ID 45 A Pw 600 W VDSS 800 V RDS(on) < 0.13 Ω TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY ISOTOP DESCRIPTION The SuperFREDMesh™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STE45N50 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
2 | STE400-100T4MI |
Vishay |
Wet Tantalum Capacitors | |
3 | STE4000-25T4MI |
Vishay |
Wet Tantalum Capacitors | |
4 | STE400P |
ST Microelectronics |
10/100 Fast Ethernet 4 Port Transceiver | |
5 | STE40NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
6 | STE40NC60 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
7 | STE40NK90ZD |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
8 | STE470-50T2MI |
Vishay |
Wet Tantalum Capacitors | |
9 | STE470-75T3MI |
Vishay |
Wet Tantalum Capacitors | |
10 | STE4700-10T3MI |
Vishay |
Wet Tantalum Capacitors | |
11 | STE47N50 |
ST Microelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
12 | STE48NM50 |
ST Microelectronics |
N-CHANNEL Power MOSFET |