STD95P3LLH6AG - STMicroelectronics

STD95P3LLH6AG P-CHANNEL POWER MOSFET

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM11258v1 Table 1: Device summary Marking Package Packing 95P3LLH6 DPAK Tape and reel July 2016 DocID029600 Rev 1 This is information on a product in full produc.

Features

Order code VDS STD95P3LLH6AG -30 V RDS(on) max. 6.9 mΩ ID -80 A PTOT 104 W Figure 1: Internal schematic diagram D(2, TAB)
 Designed for automotive applications and AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
 Logic level Applications
 Switching applications G(1) S(3) Order code STD95P3LLH6AG Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM11258v1 Ta.