STD95N4LF3 - ST Microelectronics

STD95N4LF3 Power MOSFET

This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics’ unique "single feature size" strip-based process with fewer critical alignment steps and therefore exceptional manufacturing reproducibility. The resulting transistor has extremely high packing density for low on resistance, rugged avalanche characteristics and low g.

Features

Type STD95N4LF3 VDSS 40 V RDS(on) max < 6.0 mΩ ID PD 80 A(1) 110 W 1. Value limited by wire bonding
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■ 3 1 DPAK 100% avalanche tested Logic level drive Applications
■ Switching application
  – Automotive Figure 1. Internal schematic diagram D (TAB or 2) Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics’ unique "single feature size" strip-based process with fewer critical alignment steps and therefore exceptional manufacturing reproducibility. The resulting transistor has extremely high packing density for low on resistance, rugged ava.