Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology. An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters. It’s therefore ideal for high-density converters in Telecom and Computer capplications. roduApplication Obso.
Type
VDSS
RDS(on)
ID
STD95NH02L
)STD95NH02L-1
24V 24V
< 0.005Ω < 0.005Ω
t(s1. Value limited by wire bonding
uc
■ Conduction losses reduced d
■ Switching losses reduced ro
■ Low threshold device
80A(1) 80A(1)
te PDescription oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology. An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters. It’s therefore ideal for high-density
converters in Telecom and Computer
capplications.
roduApplication Obsolete P
■ .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STD95NH02L-1 |
STMicroelectronics |
N-CHANNEL STripFET MOSFET |
|
| 2 | STD95N04 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 3 | STD95N2LH5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STD95N4F3 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 5 | STD95N4LF3 |
ST Microelectronics |
Power MOSFET |
|
| 6 | STD95P3LLH6AG |
STMicroelectronics |
P-CHANNEL POWER MOSFET |
|
| 7 | STD901T |
STMicroelectronics |
High voltage NPN Darlington transistor |
|
| 8 | STD90N02L |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 9 | STD90N02L-1 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 10 | STD90N03L |
ST Microelectronics |
N-Channel Power MOSFET |
|
| 11 | STD90N03L-1 |
ST Microelectronics |
N-Channel Power MOSFET |
|
| 12 | STD90N4F3 |
STMicroelectronics |
N-channel Power MOSFET |
|