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This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Internal schematic diagram Applications ■ Switching applications Order codes Part number STD90N03L STD90N03L-1 Marking D90N03L D90N03L-1 Package DPAK I.
Type STD90N03L STD90N03L-1
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VDSS 30V 30V
RDS(on) 0.0057Ω 0.0057Ω
ID 80A (1) 80A (1)
3 2 1 1
3
1. Pulse width limited by safe operating area
RDS(on)
*Qg industry’s benchmark Conduction losses reduced Switching losses reduced Low threshold device
IPAK
DPAK
Description
This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.
Internal schematic diagram
Applications
■
Switching applications
Order codes
Part number STD90N03L STD90N03L-1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STD90N03L |
ST Microelectronics |
N-Channel Power MOSFET |
|
| 2 | STD90N02L |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 3 | STD90N02L-1 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 4 | STD90N4F3 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | STD90NH02L |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 6 | STD901T |
STMicroelectronics |
High voltage NPN Darlington transistor |
|
| 7 | STD93003 |
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR |
|
| 8 | STD9410 |
SamHop Microelectronics |
N-Channel E nhancement Mode F ield E ffect Transistor |
|
| 9 | STD9410 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 10 | STD95N04 |
ST Microelectronics |
N-channel Power MOSFET |
|
| 11 | STD95N2LH5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 12 | STD95N4F3 |
ST Microelectronics |
N-channel Power MOSFET |
|