STD3NM60N - STMicroelectronics

STD3NM60N N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal sc.

Features

Order codes STD3NM60N VDSS @TJmax 650 V RDS(on) max. < 1.8 Ω ID 3.3 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance TAB 3 1 DPAK Applications
■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic.