The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performan.
OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STD3NM50/STD3NM50-1 Safe Operating Area For DPAK / IPAK Thermal Impedance For DPAK / IPAK www.DataSheet4U.co.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD3NM50-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | STD3NM60 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | STD3NM60-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STD3NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STD3NM60N |
INCHANGE |
N-Channel MOSFET | |
6 | STD3N25 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
7 | STD3N30 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
8 | STD3N30L |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
9 | STD3N40K3 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STD3N62K3 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STD3N65M6 |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STD3N80K5 |
STMicroelectronics |
N-channel Power MOSFET |