STD3N25 - STMicroelectronics

STD3N25 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N25 www.DataSheet4U.com s s s s s V DSS 250 V R DS( on) < 2Ω ID 3A s s TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-.

Features

T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o Value 250 250 ± 20 3 1.9 12 45 0.36 -65 to 150 150 Unit V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area January 1995 1/10 STD3N25 THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.78 100 1.5 275 o o C/W C/W o C/W o C AVAL.