STD3NM60N |
Part Number | STD3NM60N |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 3.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·100% avalanche tested ·Lo... |
Features |
·Drain Current –ID= 3.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·100% avalanche tested ·Low input capacitance and gate charge ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGSS Drain-Source Voltage Gate-Source Voltage 600 V ±25 V ID Drain Current-Continuous@TC=25℃ 3.3 A IDM Drain Current-Single Pulsed PD Total Dissipation 13 A 50 W Tj Operating Junction Temperat... |
Document |
STD3NM60N Data Sheet
PDF 256.64KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STD3NM60 |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | STD3NM60-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | STD3NM60N |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STD3NM50 |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | STD3NM50-1 |
STMicroelectronics |
N-CHANNEL MOSFET |