STD3NC60-1 - STMicroelectronics

STD3NC60-1 N-CHANNEL MOSFET

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVE.

Features

n-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 3.2 2 12.8 50 0.4 3.5
  –65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C (
•)Pulse width limited by safe operating area (1)ISD ≤3.2A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. August 2002 1/10 STD3NC60 - STD3NC60-1 THERMAL DATA Rthj-case Rthj-amb Tl Therma.