STD3NA50 - STMicroelectronics

STD3NA50 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3NA50 www.DataSheet4U.com s s s s s V DSS 500 V R DS( on) < 3Ω ID 2.7 A s s TYPICAL RDS(on) = 2.4 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) S.

Features

us) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 500 500 ± 30 2.7 1.7 10.8 50 0.4 -65 to 150 150 Unit V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area November 1996 1/10 STD3NA50 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 2.5 80 0.7 275 o o C/W C/W o C/W o.