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STD3NC60-1 |
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| Part Number | STD3NC60-1 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge ... |
| Features |
n-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 3.2 2 12.8 50 0.4 3.5 –65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C ( •)Pulse width limited by safe operating area (1)ISD ≤3.2A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. August 2002 1/10 STD3NC60 - STD3NC60-1 THERMAL DATA Rthj-case Rthj-amb Tl Therma... |
| Document |
 STD3NC60-1 Data Sheet
PDF 404.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STD3NC60 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 2 | STD3NC30 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 3 | STD3N25 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 4 | STD3N30 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 5 | STD3N30L |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|