This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive req.
Order code STD30NF06LAG
VDS 60 V
RDS(on) max. 0.028 Ω
ID 35 A
Figure 1: Internal schematic diagram D(2, TAB)
G(1) S(3)
AEC-Q101 qualified
Low threshold drive
Gate charge minimized
Applications
Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD30NF06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STD30NF06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STD30NF03L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STD30NF03LT |
STMicroelectronics |
N-Channel MOSFET | |
5 | STD30NF04LT |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STD30N01 |
SamHop Microelectronics |
N-Channel MOSFET | |
7 | STD30N10 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
8 | STD30N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STD30N10F7 |
INCHANGE |
N-Channel MOSFET | |
10 | STD30N15 |
SamHop Microelectronics |
N-Channel MOSFET | |
11 | STD30N6LF6AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
12 | STD30NE06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |