STD30N6LF6AG - STMicroelectronics

STD30N6LF6AG N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STD30N6LF6AG AM01475v1_Tab Table 1: Device summary Marking Package 30N6LF6 DPAK Packing Tape and Reel June 2015 DocID028036 Rev 1 This is information.

Features

Order code VDS RDS(on) max. ID PTOT STD30N6LF6AG 60 V 25 mΩ 24 A 40 W
• Designed for automotive applications and AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STD30N6LF6AG AM01475v1_Tab Table 1: Device summary Marking Package 30N6LF6 DPAK Packing Tape and Reel.