STD30NE06 - ST Microelectronics

STD30NE06 N-CHANNEL POWER MOSFET

This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHI.

Features

t 4U .co m Unit V V V A A A W W/ o C V/ns o o Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Peak Diode Recovery voltage slope o V DGR V GS ID 30 21 120 55 0.37 7 -65 to 175 175 (1) ISD ≤20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX ID IDM (
• ) P tot Derating Factor dv/dt T stg Tj Storage Temperature Max. Operating Junction Temperature C C 1/5 (
•) Pulse width limited by safe operating area July 19.