STD30NF03L - ST Microelectronics

STD30NF03L N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPE.

Features

ate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (pulsed) Drain Current (continuous) at Tc = 100 o C T otal Dissipation at Tc = 25 C Derating Factor 40 0.27 100 -65 to 175 175 ( 1) starting Tj = 25 oC, ID = 15A , VDD = 15V E AS ( 1 ) T st g Tj Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature C C w.D a (
•
•) Pulse width limited by safe operating area (
•)Current limited by the package October 1999 1/8 ww www.DataSheet4U.com STD30NF03L THERMAL DATA R th j-pc b R thj -amb R t hj-s ink Tl Thermal .