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STD30NE06 |
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| Part Number | STD30NE06 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugge... |
| Features |
t 4U .co m
Unit V V V A A A W W/ o C V/ns
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Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Peak Diode Recovery voltage slope
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V DGR V GS ID
30 21 120 55 0.37 7 -65 to 175 175
(1) ISD ≤20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
ID
IDM ( • ) P tot Derating Factor dv/dt T stg Tj Storage Temperature Max. Operating Junction Temperature C C 1/5 ( •) Pulse width limited by safe operating area July 19... |
| Document |
 STD30NE06 Data Sheet
PDF 72.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STD30NE06L |
ST Microelectronics |
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| 2 | STD30N01 |
SamHop Microelectronics |
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| 3 | STD30N10 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
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| 4 | STD30N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
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| 5 | STD30N10F7 |
INCHANGE |
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