STD20NE06 - ST Microelectronics

STD20NE06 N-CHANNEL MOSFET

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s .

Features

(continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor dv/dt T stg Tj Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Value 60 60 ± 20 20
*
* 17 80 50 0.33 7 -65 to 175 175 ( 1) ISD ≤ 36 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ o C V/ ns o o C C (
•) Pulse width limited by safe operating area (
*
*) Value limited only by the package January 1998 1/8 STD20NE06 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance.