Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This series of POWER MOSFETS represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche energy capability. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR.
N
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(
•) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 60 60 ± 20 20 14 80 60 0.4 -65 to 175 175
Unit V V V A A A W W/o C
o o
C C
(
*) Current limited by the package (
•) Pulse width limited by safe operating area (
*)
Marc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STD20N03L |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 2 | STD20N15 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | STD20N20 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 4 | STD20NE03L |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 5 | STD20NE06 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 6 | STD20NF06 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 7 | STD20NF06L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | STD20NF06L |
ST Microelectronics |
N-channel Power MOSFET |
|
| 9 | STD20NF06LAG |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 10 | STD20NF06T4 |
STMicroelectronics |
N-Channel MOSFET |
|
| 11 | STD20NF10 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 12 | STD20NF20 |
STMicroelectronics |
N-channel Power MOSFET |
|