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This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ HIGH SWITCHING APPLICATI.
25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 ± 20 24 17 96 60 0.4 10 300 -55 to 175
(1) ISD ≤24A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID =10 A, VDD = 45V
Unit V V V A A A W W/°C V/ns mJ °C
(
•) Pulse width limited by safe operating area.
June 2004
Rev.3.0.6
1/10
STD20NF06
TAB.1 THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STD20NF06L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | STD20NF06L |
ST Microelectronics |
N-channel Power MOSFET |
|
| 3 | STD20NF06LAG |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STD20NF06T4 |
STMicroelectronics |
N-Channel MOSFET |
|
| 5 | STD20NF10 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 6 | STD20NF20 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 7 | STD20NF20 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | STD20N03L |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 9 | STD20N06 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 10 | STD20N15 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 11 | STD20N20 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 12 | STD20NE03L |
ST Microelectronics |
N-CHANNEL MOSFET |
|