STD20N03L - SamHop Microelectronics

STD20N03L N-Channel Logic Level Enhancement Mode Field Effect Transistor

S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com 30V F E AT UR E S ( mW) ID 28A R DS (ON) Max S uper high dense cell design for low R DS (ON ). 23 @ V G S = 10V 39 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251.

Features

LECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.DataSheet4U.com Symbol BVDSS IDSS IGSS a Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS = 10V, ID =20A VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ Max Unit 30 1 100 1 1.5 17 30 50 8 614 83 61 2.5 V uA nA V Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) ID(ON) gFS b Drain-Source On-State Resistance On-State Drain Current Forward Tr.