S T U/D2040P L S amHop Microelectronics C orp. Nov.18,2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com -40V F E AT UR E S ( m W ) Max ID -20A R DS (ON) S uper high dense cell design for low R DS (ON ). 45 @ V G S = -10V 60 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G .
U/D2040P L P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = -250uA V DS = -32V, V GS= 0V V GS = 20V, V DS = 0V V DS = V GS , ID =-250uA V GS =-10V, ID= -16A V GS =-4.5V, ID = -10A V DS =-5V, V GS = -10V V DS = -10V, ID = -15A Min Typ C Max Unit -40 1 V uA 100 nA -0.8 -1.5 35 46 50 15 1115 1250 200 125 3 11.5 7.3 53.1 31.8 19.5 9.4 4.1 2.8 13 8.5 62 37 22 11 4.8 3.2 225 140 -2.0 45 60 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD2045 |
JILIN SINO |
TRENCH SCHOTTKY BARRIER DIODE | |
2 | STD2045C |
SMC Diode |
SCHOTTKY RECTIFIER | |
3 | STD200 |
Sirectifier |
Thyristor-Diode Modules | |
4 | STD200 |
Littelfuse |
RESETTABLE FUSES | |
5 | STD2000 |
STMicroelectronics |
Single-Chip Worldwide iDTV Processor | |
6 | STD2030PLS |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor | |
7 | STD20L01 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | STD20L01A |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | STD20N03L |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
10 | STD20N06 |
ST Microelectronics |
N-CHANNEL MOSFET | |
11 | STD20N15 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
12 | STD20N20 |
ST Microelectronics |
N-CHANNEL MOSFET |