STD2030PLS - SamHop Microelectronics

STD2030PLS P-Channel Enhancement Mode Field Effect Transistor

S T U/D2030P LS S amHop Microelectronics C orp. Aug 20 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com -30V F E AT UR E S ( m W ) Max ID -20A R DS (ON) S uper high dense cell design for low R DS (ON ). 32 @ V G S = -10V 55 @ V G S = -4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D .

Features

E CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = -250uA V DS = -20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID = -20A V GS =-4.5V, ID = -10A V DS = -10V, V GS = -10V V DS = -10V, ID= -10A Min Typ C Max Unit -25 -1 V uA 100 nA -1 -1.7 27 41 -30 14 950 250 170 2.6 10 22 68.8 38.5 18.5 9.6 1.6 5.8 -3 32 55 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.DataSheet4U.co.