STD16NE10L - ST Microelectronics

STD16NE10L N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPE.

Features

te Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/ dt (1 ) Peak Diode Recovery voltage slope T st g Tj Storage Temperature Max. Operating Junction Temperature o Value 100 100 ± 20 16 11 64 55 0.36 7 -65 to 175 175 ( 1) ISD ≤16A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W /o C V/ns o o C C (
•) Pulse width limited by safe operating area May 2000 1/6 STD16NE10L THERMAL DATA R th j-pc b R thj -amb R t hj-s ink Tl .