STD16NE10 - ST Microelectronics

STD16NE10 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVERS.

Features

ge (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor dv/dt( 1 ) T stg Tj July 1998 Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Value 100 100 ± 20 16 11 64 50 0.33 7 -65 to 175 175 ( 1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ o C V/ ns o o C C 1/9 (
•) Pulse width limited by safe ope.