S(3) AM01475v1_noZen This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status link.
TAB
23 1 DPAK
D(2, TAB)
Order codes
VDS at Tjmax.
RDS(on) max.
ID
STD16N65M5
710 V
279 mΩ
12 A
•
Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
Applications
G(1)
• Switching applications
Description
S(3)
AM01475v1_noZen
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
suitable for applications requiring high p.
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STD16N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STD16N60M2 |
STMicroelectronics |
N-Channel Power MOSFET | |
3 | STD16N50M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STD16NE06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STD16NE06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STD16NE06L-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STD16NE10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STD16NE10L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STD16NF06 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STD16NF06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STD16NF06L-1 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
12 | STD16NF06T4 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |