STD16NE06 - ST Microelectronics

STD16NE06 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET™” strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR.

Features

(R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o o IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Value 60 60 ± 20 16 11 64 40 0.26 7 -65 to 175 175 ( 1) ISD ≤ 16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C (
•) Pulse width limited by safe operating area February 2000 1/9 STD16NE.