STD15NF10 - ST Microelectronics

STD15NF10 N-CHANNEL POWER MOSFET

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate.

Features

eter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature o Value 100 100 ± 20 15 10 60 45 0.3 9 75 -65 to 175 175 Unit V V V A A A W W /o C V/ns mJ o o C C 1/6 Max. Operating Junction Temperature Tj (
•) Pulse width limited by safe operating area ( 2) starting Tj = 25 oC, ID =24A , VDD = 50V April 2000 (1) I SD ≤ 80 A,.