This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ' 3 !-V Table 1. Device summary Marking 150N3LLH6 150N3LLH6 150N3LLH6 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube Order codes STD1.
Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6
■
■
■
■
VDSS 30 V 30 V 30 V
RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω
ID 80 A 80 A 80 A
3 1
3 2 1
DPAK
IPAK
RDS(on)
* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
1 2 3
TO-220
Application
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Switching applications
Figure 1.
Internal schematic diagram
$ 4!" OR
Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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---|---|---|---|---|
1 | STD150NH02L |
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N-CHANNEL POWER MOSFET | |
2 | STD150NH02L-1 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STD1501 |
Semtron |
2A Buck DC/DC Converter | |
4 | STD1553 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
5 | STD1554 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | STD155N3H6 |
STMicroelectronics |
N-channel MOSFET | |
7 | STD155N3LH6 |
STMicroelectronics |
N-channel MOSFET | |
8 | STD15L01 |
SamHop Microelectronics |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
9 | STD15N06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
10 | STD15N06L |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STD15N20 |
SamHop Microelectronics |
N-Channel MOSFET | |
12 | STD15N50M2AG |
STMicroelectronics |
N-CHANNEL POWER MOSFET |