STD15N60M2-EP - STMicroelectronics

STD15N60M2-EP N-channel Power MOSFET

AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high freque.

Features

Order code VDS @ TJmax RDS(on) max. ID STD15N60M2-EP 650 V 0.378 Ω 11 A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected Applications
• Switching applications
• Tailored for very high frequency converters (f > 150 kHz) Description AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching charact.