STD15N06 - ST Microelectronics

STD15N06 N-CHANNEL POWER MOSFET

STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD15N06 s s s s s s s s V DSS 60 V R DS( on) < 0.1 Ω ID 15 A s s TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH.

Features

(continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 60 60 ± 20 15 10 60 50 0.33 -65 to 175 175 Unit V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area February 1995 1/10 STD15N06 THERMAL DATA R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3 100 1.5 275 o o C/W C/W o.