STB4NK60Z - ST Microelectronics

STB4NK60Z N-Channle MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutiona.

Features

Type STB4NK60Z STB4NK60Z-1 STD4NK60Z STD4NK60Z-1 STP4NK60Z STP4NK60ZFP VDSS 600 V 600 V 600 V 600 V 600 V 600 V RDS(on) max <2Ω <2Ω <2Ω <2Ω <2Ω <2Ω PW 70 W 70 W 70 W 70 W 70 W 25 W
■ 100% avalanche tested
■ Very low intrinsic capacitances ID 4A 4A 4A 4A 4A 4A Application
■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such s.