The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERT.
os) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 4 2.5 12 80 0.64 3.5
–65 to 150 150 Unit V V V A A A W W/°C V/ns °C °C
(
•)Pulse width limited by safe operating area (1)ISD ≤4A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX.
July 2000
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STB4NC50
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Ty.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB4NC60 |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | STB4NC60-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | STB4NC60A-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STB4NC80Z |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | STB4NC80Z-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
6 | STB4N62K3 |
ST Microelectronics |
SuperMESH3 Power MOSFET | |
7 | STB4NB50 |
STMicroelectronics |
N-CHANNEL MOSFET | |
8 | STB4NB80 |
STMicroelectronics |
N-CHANNEL MOSFET | |
9 | STB4NK60Z |
ST Microelectronics |
N-Channle MOSFET | |
10 | STB4NK60Z-1 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
11 | STB4NK60ZT4 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
12 | STB40N20 |
STMicroelectronics |
Low gate charge STripFET Power MOSFET |