Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.
MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (
• ) P tot dv/dt( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 500 500 ± 30 3.8 2.4 15.2 80 0.64 4.5 -65 to 150 150
( 1) ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C
(
•) Puls.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB4NB80 |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | STB4N62K3 |
ST Microelectronics |
SuperMESH3 Power MOSFET | |
3 | STB4NC50 |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STB4NC60 |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | STB4NC60-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
6 | STB4NC60A-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
7 | STB4NC80Z |
STMicroelectronics |
N-CHANNEL MOSFET | |
8 | STB4NC80Z-1 |
STMicroelectronics |
N-CHANNEL MOSFET | |
9 | STB4NK60Z |
ST Microelectronics |
N-Channle MOSFET | |
10 | STB4NK60Z-1 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
11 | STB4NK60ZT4 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
12 | STB40N20 |
STMicroelectronics |
Low gate charge STripFET Power MOSFET |