STB4NC60-1 - STMicroelectronics

STB4NC60-1 N-CHANNEL MOSFET

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVE.

Features

ter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4.2 2.6 16.8 100 0.8 3.5
  –65 to 150 (
*)Limited only by maximum Temperature allowed Value STP(B)4NC60(-1) 600 600 ±30 4.2(
*) 2.6(
*) 16.8(
*) 35 0.28 3.5 2500 STP4NC60FP Unit V V V A A A W W/°C V/ns V °C (
•)Pulse width limited by safe ope.