The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Internal schematic diagram Applications ■ Switching application Order codes Part number STB20NM60D Marking B20NM60D Package D²PA.
Type STB20NM60D
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VDSS 600V
RDS(on) <0.29Ω
ID 20A
Pw 45W
High dv/dt and avalanche capabilities tested
1 3
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■ 100% Avalanche
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Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields
D²PAK
Description
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Internal schematic diagram
Applications
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Switching application
Order codes
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·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB20NM60 |
INCHANGE |
N-Channel MOSFET | |
2 | STB20NM60 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STB20NM60-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
4 | STB20NM60-1 |
INCHANGE |
N-Channel MOSFET | |
5 | STB20NM60A-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STB20NM50 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB20NM50 |
INCHANGE |
N-Channel MOSFET | |
8 | STB20NM50-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
9 | STB20NM50-1 |
INCHANGE |
N-Channel MOSFET | |
10 | STB20NM50FD |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STB20NM50FD |
INCHANGE |
N-Channel MOSFET | |
12 | STB20NM50FD-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |