STB20NM60A-1 - ST Microelectronics

STB20NM60A-1 N-CHANNEL POWER MOSFET

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performan.

Features

20NM60A-1 STP20NM60A STF20NM60A MARKING B20NM60A P20NM60A F20NM60A PACKAGE I2PAK TO-220 TO-220FP PACKAGING TUBE TUBE TUBE March 2004 1/12 DataSheet 4 U .com www.DataSheet4U.com STB20NM60A-1/STP20NM60A/STF20NM60A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STB20NM60A-1 STP20NM60A VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tstg Tj Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. .