STB20NM50FD - ST Microelectronics

STB20NM50FD N-CHANNEL POWER MOSFET

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. 3 2 1 TO-220FP 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STB20N.

Features

Type VDSS RDS(on) max RDS(on)
* Qg ID STB20NM50FD 500 V < 0.25 Ω 8.36 Ω
* nC STF20NM50FD 500 V < 0.25 Ω 8.36 Ω
* nC STP20NM50FD 500 V < 0.25 Ω 8.36 Ω
* nC 20 A 20 A 20 A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Tight process control and high manufacturing yields Application
■ Switching applications Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in.