STB20NM50 - ST Microelectronics

STB20NM50 N-CHANNEL POWER MOSFET

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances. Applications ■ Switching applications 3 2 1 TO-220 3 2 1 .

Features

Type STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP VDSS (@TJmax) 550V 550V 550V 550V RDS(on) < 0.25Ω < 0.25Ω < 0.25Ω < 0.25Ω ID 20A 20A 20A 20A
■ High dv/dt and avalanche capabilities
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics and dynamic performances. Applica.