STB14NM65N - STMicroelectronics

STB14NM65N N-channel Power MOSFET

This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 14N.

Features

www.DataSheet4U.com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω ID 3 STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N 12 A 12 A 12 A(1) 12 A 12 A 1 2 3 12 TO-220 3 1 I²PAK D²PAK 3 1. Limited only by maximum temperature allowed
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■ 2 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 TO-220FP Application
■ Figure 1. Internal schematic diagram Switching applications Description This series of devices is designed using the second generation of MDmesh™ T.