STB14NF10 - ST Microelectronics

STB14NF10 N-CHANNEL POWER MOSFET

This MOSFET series realized with STMicroelectronics INTERNAL SCHEMATIC DIAGRAM unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highwww.DataSheet4U.com efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is a.

Features

DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter STB14NF10 STP14NF10 VDS VDGR VGS ID ID IDM(
•) Ptot dv/dt (1) EAS (2) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature ------55 to 175 (1) ISD ≤14A, di/dt ≤300A/µs, VDD.