STB140N10F4 - STMicroelectronics

STB140N10F4 Power MOSFET

This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in avalanche and commutation mode. The resulting transistor shows extremely high packing density for low.

Features

Type STB140N10F4 STF140N10F4 STP140N10F4
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■ VDSS 100 V 100 V 100 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 140 A 55 A 3 3 1 2 140 A TO-220FP 1 2 TO-220 Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested 3 1 Application
■ D²PAK Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high en.