STB14NK60Z - ST Microelectronics

STB14NK60Z N-CHANNEL POWER MOSFET

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applicati.

Features

TAB TAB Order codes VDS RDS(on) max. ID PTOT 123 t(s)I2PAK 3 2 1 TO-220 lete ProducTO-247 bsoFigure 1. Internal schematic diagram - OD(2, TAB) duct(s)G(1) solete ProS(3) Ob AM01476v1 STB14NK60Z-1 STP14NK60Z 600 V 0.5 Ω 13.5 A 160 W STW14NK60Z
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitances
• Very good manufacturing repeatability
• Zener-protected Applications
• Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology.