SST29VE010 - SST

SST29VE010 1 Mbit (128K x8) Page-Mode EEPROM

The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/VE010 write with a single power supply. Internal Erase/Progr.

Features

• Single Voltage Read and Write Operations
  – 5.0V-only for SST29EE010
  – 3.0-3.6V for SST29LE010
  – 2.7-3.6V for SST29VE010
• Superior Reliability
  – Endurance: 100,000 Cycles (typical)
  – Greater than 100 years Data Retention
• Low Power Consumption
  – Active Current: 20 mA (typical) for 5V and 10 mA www.DataSheet4U.com (typical) for 3.0/2.7V
  – Standby Current: 10 µA (typical)
• Fast Page-Write Operation
  – 128 Bytes per Page, 1024 Pages
  – Page-Write Cycle: 5 ms (typical)
  – Complete Memory Rewrite: 5 sec (typical)
  – Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
  – 5.0V-on.