The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE512/29LE512/29VE512 write with a single power supply. .
• Single Voltage Read and Write Operations
– 5.0V-only for SST29EE512
– 3.0-3.6V for SST29LE512
– 2.7-3.6V for SST29VE512
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 512 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 2.5 sec (typical)
– Effective Byte-Write Cycle
Time: 39 µs (typical)
Data Sheet
• Fast Read Access Time
– 5.0V-only oper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST29LE010 |
SST |
1 Mbit (128K x8) Page-Mode EEPROM | |
2 | SST2907A |
Rohm |
PNP Medium Power Transistor | |
3 | SST29EE010 |
SST |
1 Mbit (128K x8) Page-Mode EEPROM | |
4 | SST29EE512 |
SST |
512 Kilobit (64K x8) Page-Mode EEPROM | |
5 | SST29SF010 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash | |
6 | SST29SF020 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash | |
7 | SST29SF040 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash | |
8 | SST29SF512 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash | |
9 | SST29VE010 |
SST |
1 Mbit (128K x8) Page-Mode EEPROM | |
10 | SST29VE512 |
SST |
512 Kilobit (64K x8) Page-Mode EEPROM | |
11 | SST29VF010 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash | |
12 | SST29VF020 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |