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SST29VE010 |
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| Part Number | SST29VE010 |
| Manufacturer | SST |
| Description | The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector... |
| Features |
• Single Voltage Read and Write Operations – 5.0V-only for SST29EE010 – 3.0-3.6V for SST29LE010 – 2.7-3.6V for SST29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA www.DataSheet4U.com (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 1024 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) • Fast Read Access Time – 5.0V-on... |
| Document |
 SST29VE010 Data Sheet
PDF 376.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SST29VE512 |
SST |
512 Kilobit (64K x8) Page-Mode EEPROM |
|
| 2 | SST29VF010 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
|
| 3 | SST29VF020 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
|
| 4 | SST29VF040 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
|
| 5 | SST29VF512 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |
|