The SST29SF512/010/020/040 and SST29VF512/010/ 020/040 are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SS.
• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 5.0V-only for SST29SF512/010/020/040
– 2.7-3.6V for SST29VF512/010/020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 10 mA (typical)
– Standby Current: 30 µA (typical) for SST29SF512/010/020/040 1 µA (typical) for SST29VF512/010/020/040
• Sector-Erase Capability
– Uniform 128 Byte sectors
• Fast Read Access Time:
– 55 ns
– 70 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Er.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SST29VF010 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash | |
2 | SST29VF040 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash | |
3 | SST29VF512 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash | |
4 | SST29VE010 |
SST |
1 Mbit (128K x8) Page-Mode EEPROM | |
5 | SST29VE512 |
SST |
512 Kilobit (64K x8) Page-Mode EEPROM | |
6 | SST2907A |
Rohm |
PNP Medium Power Transistor | |
7 | SST29EE010 |
SST |
1 Mbit (128K x8) Page-Mode EEPROM | |
8 | SST29EE512 |
SST |
512 Kilobit (64K x8) Page-Mode EEPROM | |
9 | SST29LE010 |
SST |
1 Mbit (128K x8) Page-Mode EEPROM | |
10 | SST29LE512 |
SST |
512 Kilobit (64K x8) Page-Mode EEPROM | |
11 | SST29SF010 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash | |
12 | SST29SF020 |
Silicon Storage |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash |