SST211 - Siliconix

SST211 N-Channel Lateral DMOS FETs

SST211 SERIES N-Channel Lateral DMOS FETs ~ .-r-Sinicloicrpoornatiexd The SST211 Series is a single-pole, single-throw analog switch designed for high speed switching in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low capacitance and ultra-fast switching.

Features

NGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL SST211 LIMIT SST213 SST215 Gate-Source, Gate-Drain Voltage VGS,VGO -30/25 -15/25 -25/30 Gate-Substrate Voltage 1 Drain-Source Voltage VGB -0.3/25 -0.3/25 -0.3/30 Vos 30 10 20 Source-Drain Voltage Drain-Substrate Voltage VSO 10 10 20 VOB 30 15 25 Source-Substrate Voltage VSB 15 15 25 Drain Current 10 50 50 50 Power Dissipation Po 350 350 350 Power Derating 2.8 2.8 2.8 Operating Junction Temperature TJ -55 to 150 Storage Temperature T stg Lead Temperature (1/16" from case.